| PART |
Description |
Maker |
| NT5CB128M16HP |
2Gb DDR3 SDRAM H-Die
|
Nanya
|
| HMT325A7CFR8A HMT325A7CFR8A-G7 HMT325A7CFR8A-H9 HM |
DDR3L SDRAM ECC SO-DIMMs Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT351S6CFR8C-G7 HMT351S6CFR8C-H9 HMT351S6CFR8C-PB |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT41GV7CMR4A-H9 HMT325V7CFR8A HMT325V7CFR8A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| K4B2G1646C-HCF8000 |
2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)
|
Samsung semiconductor
|
| KFG2816U1M-PID KFG2816D1M-DEB KFG2816D1M-DED KFG28 |
OneNAND SPECIFICATION
|
SAMSUNG[Samsung semiconductor]
|
| KFG5616D1A-DEB5 KFG5616D1A-PEB5 KFG5616Q1A-PEB5 KF |
OneNAND Specification FLASH MEMORY
|
Samsung semiconductor
|
| W3EG72256MS133AJD3SG |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL 2GB 256Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Xilinx, Inc.
|
| W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册，瓦特/锁相环，葡萄多糖
|
Optrex America, Inc.
3M Company
|
| HYS72D256020GR-8-A HYS72D256020GR-7-A HYS72D128020 |
2GB (256Mx72) PC1600 2-bank available 3Q02
2GB (256Mx72) PC2100 2-bank available 3Q02
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Infineon Technologies AG
|
| 1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
| RD25050-W-AU RD25100-W-AU RD251000-W-AU RD25200-W- |
50 V, 25 A, rectifier automotive die
100 V, 25 A, rectifier automotive die
1000 V, 25 A, rectifier automotive die
200 V, 25 A, rectifier automotive die
|
TRANSYS Electronics Limited
|
